The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Sep. 28, 2018
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Wei Hong, Clifton Park, NY (US);
Hui Zang, Guilderland, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
Liu Jiang, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76281 (2013.01); H01L 21/76283 (2013.01); H01L 27/1203 (2013.01); H01L 29/7846 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a single diffusion break device and methods of manufacture. The structure includes a single diffusion break structure with a fill material between sidewall spacers of the single diffusion break structure and a channel oxidation below the fill material.