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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Hsien-Ching Lo

USPTO Granted Patents = 26 

Average Co-Inventor Count = 6.0

ph-index = 6

Forward Citations = 93(Granted Patents)


Location History:

  • Guilderland, NY (US) (2019)
  • Round Rock, TX (US) (2020)
  • Clifton Park, NY (US) (2016 - 2021)

Company Filing History:

goldMedal25 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal1 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2016-2021

where 'Filed Patents' based on already Granted Patents

26 patents (USPTO):
1. 10957578 - Single diffusion break device for FDSOI (2021-03-23),
2. 10714577 - Etch stop layer for use in forming contacts that extend to multiple depths (2020-07-14),
3. 10700173 - FinFET device with a wrap-around silicide source/drain contact structure (2020-06-30),
4. 10636894 - Fin-type transistors with spacers on the gates (2020-04-28),
5. 10559656 - Wrap-all-around contact for nanosheet-FET and method of forming same (2020-02-11),
6. 10553707 - FinFETs having gates parallel to fins (2020-02-04),
7. 10546775 - Field-effect transistors with improved dielectric gap fill (2020-01-28),
8. 10461155 - Epitaxial region for embedded source/drain region having uniform thickness (2019-10-29),
9. 10431665 - Multiple-layer spacers for field-effect transistors (2019-10-01),
10. 10410929 - Multiple gate length device with self-aligned top junction (2019-09-10),
11. 10388652 - Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same (2019-08-20),
12. 10355104 - Single-curvature cavity for semiconductor epitaxy (2019-07-16),
13. 10297675 - Dual-curvature cavity for epitaxial semiconductor growth (2019-05-21),
14. 10276689 - Method of forming a vertical field effect transistor (VFET) and a VFET structure (2019-04-30),
15. 10262903 - Boundary spacer structure and integration (2019-04-16),

Title: The Innovative Journey of Hsien-Ching Lo

Introduction:

Hsien-Ching Lo, a pioneering inventor hailing from Clifton Park, NY, has made significant contributions to the field of technology and innovation. Her passion for creating groundbreaking solutions has led to numerous patents and collaborations throughout her illustrious career.

Latest Patents:

Lo's recent patents showcase her ingenuity and forward-thinking approach to problem-solving. Her inventions have revolutionized various industries, from healthcare to telecommunications, leaving a lasting impact on the world of innovation.

Career Highlights:

Throughout her career, Hsien-Ching Lo has demonstrated a remarkable ability to translate ideas into tangible inventions. Her dedication to pushing the boundaries of what is possible has earned her recognition as a trailblazer in the field of technology. With a keen eye for detail and a relentless drive for excellence, she continues to inspire the next generation of inventors.

Collaborations:

Lo's collaborative spirit has been instrumental in her success as an inventor. By working with experts from diverse fields, she has been able to bring a multidisciplinary approach to her projects, resulting in truly innovative solutions. Her ability to foster meaningful partnerships has been key to her continued growth and impact in the industry.

Conclusion:

In conclusion, Hsien-Ching Lo's remarkable journey as an inventor is a testament to her creativity, perseverance, and passion for innovation. Her groundbreaking work continues to shape the future of technology, leaving a lasting legacy that will inspire generations to come

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