The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Jun. 22, 2017
Globalfoundries Inc., Grand Cayman, KY;
Judson R. Holt, Ballston Lake, NY (US);
Yi Qi, Niskayuna, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Jianwei Peng, Latham, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to an N-P boundary spacer structure used with finFET devices and methods of manufacture. The method includes forming a plurality of first fin structures, forming a blocking layer between a first fin structure of the plurality of fin structures and a second fin structure of the plurality of fin structures, and forming an epitaxial material on the first fin structure, while blocking the epitaxial material from extending onto the second fin structure by at least the blocking layer formed between the first fin structure and the second fin structure.