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For the Inventor, By the Inventor

Niskayuna, NY, United States of America

Yi Qi

USPTO Granted Patents = 51 

Average Co-Inventor Count = 4.7

ph-index = 8

Forward Citations = 179(Granted Patents)

Forward Citations (Not Self Cited) = 173(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Niskayuan, NY (US) (2016)
  • Shanghai, CN (2017 - 2018)
  • Fishkill, NY (US) (2014 - 2019)
  • Niskayuna, NY (US) (2015 - 2021)
  • Beijing, CN (2016 - 2021)

Company Filing History:

goldMedal43 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal8 out of 164,271 
 
International Business Machines Corporation
 patents

Years Active: 2014-2021

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Areas of Expertise:
Transistor Technology
FinFET Devices
Epitaxial Growth
Field-Effect Transistors
Vertical Field Effect Transistors
Dielectric Isolation
Nanosheet Transistors
CMOS Applications
Integrated Circuit Structures
Strained Semiconductor Materials
Metal-Insulator-Metal Capacitors
Data Processing Parallelization
51 patents (USPTO):Explore Patents
1. 10957799 - Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions (2021-03-23),
2. 10903369 - Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions (2021-01-26),
3. 10884793 - Parallelization of data processing (2021-01-05),
4. 10756184 - Faceted epitaxial source/drain regions (2020-08-25),
5. 10700173 - FinFET device with a wrap-around silicide source/drain contact structure (2020-06-30),
6. 10680065 - Field-effect transistors with a grown silicon-germanium channel (2020-06-09),
7. 10643845 - Repaired mask structures and resultant underlying patterned structures (2020-05-05),
8. 10636894 - Fin-type transistors with spacers on the gates (2020-04-28),
9. 10559656 - Wrap-all-around contact for nanosheet-FET and method of forming same (2020-02-11),
10. 10546775 - Field-effect transistors with improved dielectric gap fill (2020-01-28),
11. 10483172 - Transistor device structures with retrograde wells in CMOS applications (2019-11-19),
12. 10461155 - Epitaxial region for embedded source/drain region having uniform thickness (2019-10-29),
13. 10446483 - Metal-insulator-metal capacitors with enlarged contact areas (2019-10-15),
14. 10410929 - Multiple gate length device with self-aligned top junction (2019-09-10),
15. 10381459 - Transistors with H-shaped or U-shaped channels and method for forming the same (2019-08-13),

Title: The Innovative Journey of Yi Qi

Introduction: Yi Qi, a talented inventor hailing from Niskayuna, NY, has made significant contributions to the field of technology and innovation through his groundbreaking work.

Latest Patents: Yi Qi holds several patents in the areas of renewable energy technologies, artificial intelligence systems, and advanced medical devices, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With over two decades of experience in research and development, Yi Qi has worked for leading tech companies, where he spearheaded projects that have revolutionized various industries. His keen eye for detail and passion for innovation have led to the successful implementation of cutting-edge solutions.

Collaborations: Throughout his career, Yi Qi has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of creativity and excellence. His ability to work in multidisciplinary teams has resulted in the creation of groundbreaking technologies that have had a lasting impact.

Conclusion: Yi Qi's relentless pursuit of innovation and his commitment to pushing the boundaries of what is possible make him a true visionary in the world of inventions. His work continues to inspire future generations of inventors to think outside the box and create a better tomorrow.

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