The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Jan. 02, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0335 (2013.01); H01L 21/0262 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/02639 (2013.01); H01L 21/0332 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to cut margin structures and methods of manufacture. The method includes: forming a plurality of patterned hardmask stacks containing at least a semiconductor layer and a capping layer; removing a portion of a first patterned hardmask stack and a margin of an adjacent hardmask stack of the plurality of the patterned hardmask stacks; and selectively growing material on the margin of the adjacent hardmask stack.