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For the Inventor, By the Inventor

Albany, NY, United States of America

Xunyuan Zhang

This inventor holds 115 USPTO granted patents and 16 published patent applications, primarily in Semiconductor Technology (CPC class H01L23-5226). Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc., International Business Machines Corporation. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xunyuan Zhang. Retrieved from https://idiyas.com/inventor/xunyuan-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 115 

% Patents Active = 67.0

Average Co-Inventor Count = 3.0

ph-index = 12

Forward Citations = 597(Granted Patents)

Forward Citations (Not Self Cited) = 552(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Troy, NY (US) (2013 - 2019)
  • Albany, NY (US) (2013 - 2024)

Company Filing History:

goldMedal111 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal3 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents
bronzeMedal2 out of 166,351 
 
International Business Machines Corporation
 patents
4. 1 out of 726 
 
Intermolecular, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2013-2026

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Areas of Expertise:
Semiconductor Device
Interconnects
Via Structures
Low Resistivity Contacts
Metal Insulator Metal Capacitors
Self-Aligned Structures
Extreme Ultraviolet Photolithography
Vertical Field Effect Transistor
Cobalt Interconnects
Overlay Mark Structures
Skip Via Structures
Integrated Circuit Structure
115 patents (USPTO):Explore Patents
1. RE50914 - Semiconductor device having a self-forming barrier layer at via bottom (2026-06-09),
2. RE49820 - Semiconductor device having a self-forming barrier layer at via bottom (2024-01-30),
3. 11114338 - Fully aligned via in ground rule region (2021-09-07),
4. 10679937 - Devices and methods of forming low resistivity noble metal interconnect (2020-06-09),
5. 10643845 - Repaired mask structures and resultant underlying patterned structures (2020-05-05),
6. 10636698 - Skip via structures (2020-04-28),
7. 10636656 - Methods of protecting structure of integrated circuit from rework (2020-04-28),
8. 10629428 - Metal insulator metal capacitor devices (2020-04-21),
9. 10627720 - Overlay mark structures (2020-04-21),
10. 10573593 - Metal interconnects for super (skip) via integration (2020-02-25),
11. 10553478 - IC structure with interface liner and methods of forming same (2020-02-04),
12. 10546854 - Methods of forming V0 structures for semiconductor devices by forming a protection layer with a non-uniform thickness (2020-01-28),
13. 10485111 - Via and skip via structures (2019-11-19),
14. RE47630 - Semiconductor device having a self-forming barrier layer at via bottom (2019-09-30),
15. 10366919 - Fully aligned via in ground rule region (2019-07-30),

Title: Innovator Spotlight: Xunyuan Zhang - Pioneering Semiconductor Technologies in Albany, NY

Introduction:

Xunyuan Zhang, a prolific inventor based in Albany, NY, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 114 patents, Zhang's groundbreaking work continues to drive innovation in the industry.

Latest Patents:

1. Semiconductor device having a self-forming barrier layer at via bottom: Zhang's innovative approach involves the formation of a semiconductor device with a self-forming barrier layer at the via bottom. By selectively applying metal layers and barrier materials like cobalt or tantalum, Zhang's method enhances the performance and reliability of semiconductor devices.

2. Fully aligned via in the ground rule region: Zhang's patent focuses on fully aligned via structures in semiconductor devices. By optimizing the placement of conductive structures and utilizing etch stop layers, Zhang's method ensures direct electrical contact, improving the overall efficiency of the devices.

Career Highlights:

Xunyuan Zhang has lent his expertise to prominent companies such as Globalfoundries Inc. and IBM (International Business Machines Corporation). His innovative solutions and strategic vision have played a pivotal role in driving technological advancements in the semiconductor industry.

Collaborations:

Throughout his career, Zhang has collaborated with esteemed professionals in the field, including Errol Todd Ryan and Ruilong Xie. Together, they have worked on cutting-edge projects that have reshaped the landscape of semiconductor technology.

Conclusion:

Inventor Xunyuan Zhang's dedication to pushing the boundaries of semiconductor technology is evident in his numerous patented inventions. His contributions have not only propelled the industry forward but have also inspired a new generation of innovators to explore the possibilities of technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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