The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Aug. 18, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Lei Sun, Altamont, NY (US);

John Zhang, Altamont, NY (US);

Shao Beng Law, Watervliet, NY (US);

Guoxiang Ning, Clifton Park, NY (US);

Xunyuan Zhang, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/544 (2006.01); C23C 14/22 (2006.01); C23C 16/455 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70216 (2013.01); C23C 14/22 (2013.01); C23C 16/455 (2013.01); G03F 7/70633 (2013.01); H01L 21/7682 (2013.01); H01L 21/7684 (2013.01); H01L 21/76816 (2013.01); H01L 21/76849 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/544 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 2223/54426 (2013.01);
Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to overlay mark structures and methods of manufacture. The method includes: forming an overlay mark within a layer of a stack of layers; increasing a density of an upper layer of the stack of layers, above the layer, the increased density protecting the overlay mark; and polishing the upper layer or one or more layers above the upper layer of the stack of layers.


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