The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Mar. 09, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Shariq Siddiqui, Delmar, NY (US);
Han You, Cohoes, NY (US);
Xunyuan Zhang, Albany, NY (US);
Rohit Galatage, Clifton Park, NY (US);
Roger A. Quon, Rhinebeck, NY (US);
Christopher J. Penny, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/92 (2006.01); H01G 4/08 (2006.01); H01L 21/02 (2006.01); H01L 21/8242 (2006.01); H01L 21/8234 (2006.01); H01L 49/02 (2006.01); C23C 16/455 (2006.01); H01L 27/06 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/022 (2013.01); C23C 16/45527 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02332 (2013.01); H01L 21/02337 (2013.01); H01L 21/02348 (2013.01); H01L 21/3105 (2013.01); H01L 27/0629 (2013.01); H01L 28/60 (2013.01); H01L 21/76816 (2013.01);
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to metal insulator metal capacitor devices and methods of manufacture. The method includes: depositing a bottom plate; depositing a dielectric film over the bottom plate; exposing the dielectric film to a gas; curing the dielectric film; and depositing a top plate over the dielectric film.