Clifton Park, NY, United States of America

Errol Todd Ryan

This inventor holds 61 USPTO granted patents and 10 published patent applications, primarily in Integrated Circuits (CPC class H01L). Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation, Intermolecular, Inc.. Active years: 2002-2020.

USPTO Granted Patents = 61 

% Patents Active = 57.4

Average Co-Inventor Count = 2.4

ph-index = 9

Forward Citations = 299(Granted Patents)

Forward Citations (Not Self Cited) = 294(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Austin, TX (US) (2002 - 2005)
  • Wappingers Falls, NY (US) (2006)
  • Wappingers Fall, NY (US) (2005 - 2010)
  • Clifton Park, NY (US) (2013 - 2020)

Company Filing History:


Years Active: 2002-2020

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Areas of Expertise:
Integrated Circuits
Interconnects
Semiconductor Fabrication
Low Resistivity
Noble Metal
Via Structures
Dielectric Field
Optical Components
Copper Structures
Barrier Layer
Pore Stuffing
Conductive Capping Layer
61 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Errol Todd Ryan

Introduction

Errol Todd Ryan is a prominent inventor based in Clifton Park, NY, known for his significant contributions to semiconductor technology. With an impressive portfolio of 61 patents, Ryan has established himself as a leader in developing innovative methods and devices that enhance electronic device performance.

Latest Patents

Among his latest patents are groundbreaking works, such as "Devices and methods of forming low resistivity noble metal interconnect." This invention provides detailed methods for fabricating integrated circuit devices to create low resistivity interconnects. The process includes the formation of an intermediate semiconductor interconnect device featuring a substrate, cap layer, and a dielectric matrix. Key steps involve the deposition of a barrier layer and metal interconnect material, which are crucial for improving semiconductor efficiency.

Additionally, Ryan’s patent on "Skip via structures" introduces advanced semiconductor structures and manufacturing techniques. This patent describes a configuration wherein a skip via passes through upper wiring levels, making connections with first wiring structures to optimize electrical pathways. The design also incorporates protective material to enhance the durability of the wiring structure.

Career Highlights

Errol Todd Ryan has made substantial contributions during his tenure at leading technology companies. He has worked with Globalfoundries Inc. and Advanced Micro Devices Corporation, where he focused on integrating innovative solutions to enhance semiconductor manufacturing processes. His innovations have played a vital role in streamlining production and improving device performance in the ever-evolving electronics market.

Collaborations

Collaboration has been a significant aspect of Ryan’s career. He has partnered with notable colleagues such as Xunyuan Zhang and Paul Raymond Besser, contributing to various projects that have pushed the boundaries of semiconductor technology. These collaborations have fostered an environment of creativity and innovation, leading to numerous patented solutions in the industry.

Conclusion

Errol Todd Ryan's impressive track record of 61 patents reflects his dedication to innovation in semiconductor technology. His latest inventions showcase his commitment to enhancing electronic devices and contributing to the industry's advancement. Through collaborative efforts with esteemed colleagues, Ryan continues to shape the future of semiconductor manufacturing and device performance.

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