The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Aug. 21, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Sean Xuan Lin, Watervliet, NY (US);
Christian Witt, Woodbridge, CT (US);
Mark V. Raymond, Latham, NY (US);
Nicholas V. LiCausi, Watervliet, NY (US);
Errol Todd Ryan, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/12 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 21/76886 (2013.01); H01L 23/53238 (2013.01); H01L 23/53257 (2013.01); H01L 21/288 (2013.01);
Abstract
Structures for interconnects and methods of forming interconnects. An interconnect opening in a dielectric layer includes a first portion and a second portion arranged over the first portion. A first conductor layer composed of a first metal is arranged inside the first portion of the interconnect opening. A second conductor layer composed of a second metal is arranged inside the second portion of the interconnect opening. The first metal is ruthenium.