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Mark V Raymond

This inventor holds 26 USPTO granted patents and 2 published patent applications. Top assignees: Globalfoundries Inc., International Business Machines Corporation, Globalfoundries U.S. Inc.. Active years: 2014-2023.

USPTO Granted Patents = 26 (Patent Applications = 2)

% Patents Active = 73.1

Average Co-Inventor Count = 4.5

ph-index = 5

Forward Citations = 60(Granted Patents)

Location History:

Albany, NY (US) (2017 - 2018)
Schenectady, NY (US) (2014 - 2021)
Latham, NY (US) (2017 - 2023)

Company Filing History:

International Business Machines Corporation

patents

2 out of 1,081

Globalfoundries U.S. Inc.

where one patent can have more than one assignee

Years Active: 2014-2023

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26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11621333 - Gate contact structure for a transistor device (2023-04-04),

2. 11031484 - Silicided gate structures (2021-06-08),

3. 10854515 - Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation (2020-12-01),

4. 10727308 - Gate contact structure for a transistor (2020-07-28),

5. 10643894 - Surface area and Schottky barrier height engineering for contact trench epitaxy (2020-05-05),

6. 10643893 - Surface area and Schottky barrier height engineering for contact trench epitaxy (2020-05-05),

7. 10593593 - Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation (2020-03-17),

8. 10580696 - Interconnects formed by a metal displacement reaction (2020-03-03),

9. 10490641 - Methods of forming a gate contact structure for a transistor (2019-11-26),

10. 10483363 - Methods of forming a gate contact structure above an active region of a transistor (2019-11-19),

11. 10283608 - Low resistance contacts to source or drain region of transistor (2019-05-07),

12. 10283372 - Interconnects formed by a metal replacement process (2019-05-07),

13. 10204994 - Methods of forming a semiconductor device with a gate contact positioned above the active region (2019-02-12),

14. 10186599 - Forming self-aligned contact with spacer first (2019-01-22),

15. 10157794 - Integrated circuit structure with stepped epitaxial region (2018-12-18),

Title: The Inventor Mark V Raymond: Pioneering Innovations in Latham, NY

Introduction: Mark V Raymond is a distinguished inventor based in Latham, NY, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Mark V Raymond holds several patents in diverse areas such as renewable energy technologies, medical devices, and consumer electronics, showcasing his versatility and ingenuity.

Career Highlights: With a career spanning over two decades, Mark V Raymond has consistently pushed the boundaries of technological advancement, with his inventions revolutionizing industries and improving the lives of many.

Collaborations: Throughout his career, Mark V Raymond has collaborated with leading research institutions, universities, and companies to bring his ideas to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Mark V Raymond's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors, with his work leaving a lasting impact on society.

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