logo

For the Inventor, By the Inventor

Latham, NY, United States of America

Mark V Raymond

This inventor holds 26 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Fabrication. Top assignees: Globalfoundries Inc., International Business Machines Corporation, Globalfoundries U.S. Inc.. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark V Raymond. Retrieved from https://idiyas.com/inventor/mark-v-raymond

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 26 

% Patents Active = 73.1

Average Co-Inventor Count = 4.5

ph-index = 5

Forward Citations = 60(Granted Patents)


Location History:

  • Albany, NY (US) (2017 - 2018)
  • Schenectady, NY (US) (2014 - 2021)
  • Latham, NY (US) (2017 - 2023)

Company Filing History:

goldMedal23 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal4 out of 166,425 
 
International Business Machines Corporation
 patents
bronzeMedal2 out of 1,093 
 
Globalfoundries U.S. Inc.
 patents
4. 1 out of 726 
 
Intermolecular, Inc.
 patents
where one patent can have more than one assignee

Years Active: 2014-2023

Loading Chart...
Areas of Expertise:
Gate Contact Structure
Transistor Device
Silicided Structures
Cobalt Formations
Epitaxial Region
Metal Displacement Reaction
Low Resistance Contacts
Integrated Circuits
MOL Interconnects
Replacement Gate Technique
FinFET Devices
Circular Transmission Line
26 patents (USPTO):Explore Patents
1. 11621333 - Gate contact structure for a transistor device (2023-04-04),
2. 11031484 - Silicided gate structures (2021-06-08),
3. 10854515 - Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation (2020-12-01),
4. 10727308 - Gate contact structure for a transistor (2020-07-28),
5. 10643894 - Surface area and Schottky barrier height engineering for contact trench epitaxy (2020-05-05),
6. 10643893 - Surface area and Schottky barrier height engineering for contact trench epitaxy (2020-05-05),
7. 10593593 - Methods, apparatus, and system for protecting cobalt formations from oxidation during semiconductor device formation (2020-03-17),
8. 10580696 - Interconnects formed by a metal displacement reaction (2020-03-03),
9. 10490641 - Methods of forming a gate contact structure for a transistor (2019-11-26),
10. 10483363 - Methods of forming a gate contact structure above an active region of a transistor (2019-11-19),
11. 10283608 - Low resistance contacts to source or drain region of transistor (2019-05-07),
12. 10283372 - Interconnects formed by a metal replacement process (2019-05-07),
13. 10204994 - Methods of forming a semiconductor device with a gate contact positioned above the active region (2019-02-12),
14. 10186599 - Forming self-aligned contact with spacer first (2019-01-22),
15. 10157794 - Integrated circuit structure with stepped epitaxial region (2018-12-18),

Title: The Inventor Mark V Raymond: Pioneering Innovations in Latham, NY

Introduction: Mark V Raymond is a distinguished inventor based in Latham, NY, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Mark V Raymond holds several patents in diverse areas such as renewable energy technologies, medical devices, and consumer electronics, showcasing his versatility and ingenuity.

Career Highlights: With a career spanning over two decades, Mark V Raymond has consistently pushed the boundaries of technological advancement, with his inventions revolutionizing industries and improving the lives of many.

Collaborations: Throughout his career, Mark V Raymond has collaborated with leading research institutions, universities, and companies to bring his ideas to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Mark V Raymond's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors, with his work leaving a lasting impact on society.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…