The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
Sep. 15, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Sean Xuan Lin, Watervliet, NY (US);
Xunyuan Zhang, Troy, NY (US);
Mark V. Raymond, Latham, NY (US);
Errol Todd Ryan, Clifton Park, NY (US);
Nicholas V. LiCausi, Watervliet, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32055 (2013.01); H01L 21/7682 (2013.01); H01L 23/53242 (2013.01); H01L 23/53252 (2013.01); H01L 21/76877 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Methods of forming interconnects. An interconnect opening is formed in a dielectric layer. A first conductor layer composed of a first metal is formed in the interconnect opening. A second conductor layer is formed inside the interconnect opening by displacing the first metal of the first conductor layer and replacing the first metal with a second metal different from the first metal.