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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10643894 B1

PDFFull Text
Date of Patent:
May. 05, 2020

Filed:

May. 17, 2017

Surface area and schottky barrier height engineering for contact trench epitaxy

Applicants:

International Business Machines Corporation, Armonk, NY (US);

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Jody Fronheiser, Delmar, NY (US);

Shogo Mochizuki, Clifton Park, NY (US);

Hiroaki Niimi, Cohoes, NY (US);

Balasubramanian Pranatharthiharan, Watervliet, NY (US);

Mark Raymond, Latham, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Assignees:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

GLOBALFOUNDRIES, INC., , KY;

Attorneys:

Cantor Colburn LLP

Vazken Alexanian

Primary Examiner:

Jami Valentine Miller

Assistant Examiner:

Dilinh P Nguyen

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/02068 (2013.01); H01L 21/285 (2013.01); H01L 21/76814 (2013.01); H01L 29/045 (2013.01); H01L 29/0847 (2013.01); H01L 29/0895 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 21/28525 (2013.01); H01L 21/76831 (2013.01); H01L 29/456 (2013.01); H01L 29/785 (2013.01);
Abstract

Forming a contact is disclosed. A trench through an interlayer dielectric layer is opened down to a substrate. The interlayer dielectric layer is formed on the substrate such that the substrate is the bottom surface of the trench. A cleaning process of the trench is performed. The bottom surface of the trench is recessed. A trench contact epitaxial layer is formed in the trench. An oxide layer is formed on top of the trench contact epitaxial layer in the trench. A metal oxide layer is formed on top of the oxide layer in the trench. A metal contact is formed on top of the metal oxide layer, where the oxide layer and the metal oxide layer together form a dipole layer.

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