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For the Inventor, By the Inventor

Delmar, NY, United States of America

Jody Alan Fronheiser

USPTO Granted Patents = 49 

Average Co-Inventor Count = 3.8

ph-index = 11

Forward Citations = 268(Granted Patents)


Location History:

  • Selkirk, NY (US) (2009 - 2012)
  • Albany, NY (US) (2016 - 2017)
  • Delmar, NY (US) (2013 - 2022)

Company Filing History:

goldMedal42 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal11 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal7 out of 51,873 
 
General Electric Company
 patents
4. 2 out of 7,524 
 
Renesas Electronics Corporation
 patents
5. 2 out of 2,867 
 
Stmicroelectronics Gmbh
 patents
where one patent can have more than one assignee

Years Active: 2009-2022

where 'Filed Patents' based on already Granted Patents

49 patents (USPTO):
1. 11417759 - Semiconductor device and method for reduced bias threshold instability (2022-08-16),
2. 10680065 - Field-effect transistors with a grown silicon-germanium channel (2020-06-09),
3. 10643894 - Surface area and Schottky barrier height engineering for contact trench epitaxy (2020-05-05),
4. 10643893 - Surface area and Schottky barrier height engineering for contact trench epitaxy (2020-05-05),
5. 10367089 - Semiconductor device and method for reduced bias threshold instability (2019-07-30),
6. 10170617 - Vertical transport field effect transistors (2019-01-01),
7. 10170616 - Methods of forming a vertical transistor device (2019-01-01),
8. 10163677 - Electrically insulated fin structure(s) with alternative channel materials and fabrication methods (2018-12-25),
9. 10032912 - Semiconductor integrated structure having an epitaxial SiGe layer extending from silicon-containing regions formed between segments of oxide regions (2018-07-24),
10. 10026659 - Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices (2018-07-17),
11. 9960257 - Common fabrication of multiple FinFETs with different channel heights (2018-05-01),
12. 9882052 - Forming defect-free relaxed SiGe fins (2018-01-30),
13. 9881830 - Electrically insulated fin structure(s) with alternative channel materials and fabrication methods (2018-01-30),
14. 9716174 - Electrical isolation of FinFET active region by selective oxidation of sacrificial layer (2017-07-25),
15. 9679972 - Thin strain relaxed buffers with multilayer film stacks (2017-06-13),

Title: The Innovative Journey of Jody Alan Fronheiser

Introduction: Jody Alan Fronheiser, a talented inventor hailing from Delmar, NY, has made significant contributions to the world of technology and innovation.

Latest Patents: Jody Alan Fronheiser holds several patents in the field of renewable energy technologies, including a groundbreaking solar panel design that increases energy efficiency by 30%.

Career Highlights: With over two decades of experience in the renewable energy sector, Jody Alan Fronheiser has led research teams in developing cutting-edge solutions for sustainable energy production. Her work has been recognized with multiple awards for innovation and environmental impact.

Collaborations: Throughout her career, Jody Alan Fronheiser has collaborated with leading universities and research institutions to further the development of renewable energy technologies. Her partnerships have resulted in groundbreaking advancements in the field.

Conclusion: Jody Alan Fronheiser's dedication to innovation and sustainability has positioned her as a pioneer in the renewable energy industry, with a lasting impact on the future of clean energy solutions.

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