The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Dec. 20, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Murat Kerem Akarvardar, Saratoga Springs, NY (US);

Jody A. Fronheiser, Delmar, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76202 (2013.01); H01L 29/045 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Semiconductor structures and fabrication methods are provided which includes, for instance, fabricating a semiconductor fin structure by: providing a fin structure extending above a substrate, the fin structure including a first fin portion, a second fin portion disposed over the first fin portion, and an interface between the first and the second fin portions, where the first fin portion and the second fin portion are lattice mismatched within the fin structure; and modifying, in part, the fin structure to obtain a modified fin structure, the modifying including selectively oxidizing the interface to form an isolation region within the modified fin structure, where the isolation region electrically insulates the first fin portion from the second fin portion, while maintaining structural stability of the modified fin structure.


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