The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
Jan. 29, 2015
Methods of forming fin isolation regions under tensile-strained fins on finfet semiconductor devices
Globalfoundries Inc., Grand Cayman, KY;
Ajey Poovannummoottil Jacob, Watervliet, NY (US);
Murat Kerem Akarvardar, Saratoga Springs, NY (US);
Jody A. Fronheiser, Delmar, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed herein includes, among other things, forming a composite fin structure that is comprised of a first germanium-containing semiconductor material having a first concentration of germanium and a tensile-strained second semiconductor material (having a lesser germanium concentration) positioned on the first germanium-containing semiconductor material and performing a thermal anneal process to convert the first germanium-containing semiconductor material portion of the composite fin structure into a germanium-containing oxide isolation region positioned under the second semiconductor material that is a tensile-strained final fin for an NMOS FinFET device.