The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Feb. 03, 2017
Globalfoundries Inc., Grand Cayman, KY;
Jiseok Kim, Guilderland, NY (US);
Hiroaki Niimi, Cohoes, NY (US);
Hoon Kim, Horseheads, NY (US);
Puneet Harischandra Suvarna, Menands, NY (US);
Steven Bentley, Menands, NY (US);
Jody A. Fronheiser, Delmar, NY (US);
GLOBALFOUNDRIES, Grand Cayman, KY;
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to vertical transport field effect transistor devices and methods of manufacture. A structure includes: a vertical fin structure having a lower dopant region, an upper dopant region and a channel region between the lower dopant region and the upper dopant region; and a doped semiconductor material provided on sides of the vertical fin structure at a lower portion. The lower dopant region being composed of the doped semiconductor material which is merged into the vertical fin structure at the lower portion.