The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Jun. 06, 2019
General Electric Company, Schenectady, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Joseph Darryl Michael, Delmar, NY (US);
Tammy Lynn Johnson, Ballston Lake, NY (US);
David Alan Lilienfeld, Niskayuna, NY (US);
Kevin Sean Matocha, Starkville, MS (US);
Jody Alan Fronheiser, Delmar, NY (US);
William Gregg Hawkins, Rexford, NY (US);
General Electric Company, Schenectady, NY (US);
Abstract
According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.