William Gregg Hawkins

Title: Innovations of William Gregg Hawkins

Introduction

William Gregg Hawkins is an accomplished inventor based in Rexford, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on improving the performance and reliability of semiconductor devices.

Latest Patents

Hawkins' latest patents include a semiconductor device and method for reduced bias threshold instability. This invention features a semiconductor substrate made of silicon carbide, with a gate electrode and a drain electrode strategically placed to enhance device performance. The design incorporates a dielectric layer and a remedial layer to mitigate negative bias temperature instability, ensuring a change in threshold voltage of less than about 1 volt.

Another notable patent involves systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices. This patent addresses the challenges associated with high-energy implantation masks used in forming silicon carbide power devices. The intermediate semiconductor device structure includes a SiC substrate layer and a silicon high-energy implantation mask, which is crucial for blocking implantation during high-energy processes.

Career Highlights

William Gregg Hawkins is currently employed at General Electric Company, where he continues to innovate in the semiconductor field. His expertise and contributions have positioned him as a key player in advancing semiconductor technology.

Collaborations

Hawkins has collaborated with notable colleagues, including Kevin Sean Matocha and Stephen Daley Arthur. Their combined efforts have led to advancements in semiconductor device design and fabrication techniques.

Conclusion

William Gregg Hawkins is a prominent inventor whose work in semiconductor technology has led to multiple patents and significant advancements in the field. His contributions continue to shape the future of semiconductor devices.