The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Sep. 28, 2018
General Electric Company, Schenectady, NY (US);
William Gregg Hawkins, Niskayuna, NY (US);
Reza Ghandi, Niskayuna, NY (US);
Christopher Bauer, Niskayuna, NY (US);
Shaoxin Lu, San Jose, CA (US);
GENERAL ELECTRIC COMPANY, Niskayuna, NY (US);
Abstract
The subject matter disclosed herein relates to wide band gap semiconductor power devices and, more specifically, to high-energy implantation masks used in forming silicon carbide (SiC) power devices, such as charge balanced (CB) SiC power devices. An intermediate semiconductor device structure includes a SiC substrate layer having a first conductivity type and silicon carbide (SiC) epitaxial (epi) layer having the first conductivity type disposed on the SiC substrate layer. The intermediate device structure also includes a silicon high-energy implantation mask (SiHEIM) disposed directly on a first portion of the SiC epi layer and having a thickness between 5 micrometers (μm) and 20 μm. The SiHEIM is configured to block implantation of the first portion of the SiC epi layer during a high-energy implantation process having an implantation energy greater than 500 kiloelectron volts (keV).