Niskayuna, NY, United States of America

Christopher Bauer

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: General Electric Company. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Christopher Bauer. Retrieved from https://idiyas.com/inventor/christopher-bauer-3vjlp94x

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Christopher Bauer: Innovator in Semiconductor Technology

Introduction

Christopher Bauer is a notable inventor based in Niskayuna, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high-energy implantation masks for wide band gap semiconductor devices.

Latest Patents

Bauer holds a patent for "Systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices." This patent focuses on the use of high-energy implantation masks in the formation of silicon carbide (SiC) power devices. The invention includes an intermediate semiconductor device structure that features a SiC substrate layer and a silicon high-energy implantation mask (SiHEIM) designed to block implantation during high-energy processes.

Career Highlights

Christopher Bauer is associated with General Electric Company, where he has been instrumental in advancing semiconductor technologies. His work has implications for the efficiency and performance of power devices, which are critical in various applications.

Collaborations

Bauer has collaborated with notable colleagues such as Shaoxin Lu and William Gregg Hawkins, contributing to the innovative environment at General Electric Company.

Conclusion

Christopher Bauer's work in semiconductor technology exemplifies the impact of innovation in modern electronics. His patent and contributions continue to influence the development of advanced power devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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