The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Jun. 30, 2016
Globalfoundries Inc., Grand Cayman, KY;
Robert Judson Holt, Ballston Lake, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Jody Fronheiser, Delmar, NY (US);
Bharat Krishnan, Clifton Park, NY (US);
Churamani Gaire, Clifton Park, NY (US);
Timothy James McArdle, Ballston Lake, NY (US);
Murat Kerem Akarvardar, Saratoga Springs, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of forming defect-free relaxed SiGe fins is provided. Embodiments include forming fully strained defect-free SiGe fins on a first portion of a Si substrate; forming Si fins on a second portion of the Si substrate; forming STI regions between adjacent SiGe fins and Si fins; forming a cladding layer over top and side surfaces of the SiGe fins and the Si fins and over the STI regions in the second portion of the Si substrate; recessing the STI regions on the first portion of the Si substrate, revealing a bottom portion of the SiGe fins; implanting dopant into the Si substrate below the SiGe fins; and annealing.