The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Apr. 28, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Hao Tang, Slingerlands, NY (US);

Cheng Chi, Jersey City, NJ (US);

Daniel Chanemougame, Troy, NY (US);

Lars W. Liebmann, Halfmoon, NY (US);

Mark V. Raymond, Latham, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 23/535 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 21/823821 (2013.01); H01L 23/535 (2013.01); H01L 27/0924 (2013.01); H01L 29/45 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 2029/7858 (2013.01);
Abstract

One illustrative method disclosed includes, among other things, forming a conductive source/drain metallization structure adjacent a gate, forming a gate contact opening that exposes at least a portion of a front face of the conductive source/drain metallization structure and a portion of an upper surface of a gate structure of the gate. In this example, the method further includes forming an internal insulating spacer within the gate contact opening that is positioned on and in contact with the exposed portion of the front face, wherein the spacer leaves at least a portion of the upper surface of the gate structure exposed, and forming a conductive gate contact structure (CB) in the conductive gate contact opening.


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