Jersey City, NJ, United States of America

Cheng Chi

This inventor holds 66 USPTO granted patents and 14 published patent applications, primarily in Transistor Technology (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Stmicroelectronics Gmbh. Active years: 2016-2025.

USPTO Granted Patents = 66 

% Patents Active = 62.1

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 166(Granted Patents)

Forward Citations (Not Self Cited) = 149(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Jersey City, NY (US) (2018 - 2019)
  • Albany, NY (US) (2019)
  • Jersey City, NJ (US) (2016 - 2024)

Company Filing History:


Years Active: 2016-2025

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Areas of Expertise:
Nanosheet Devices
Transistor Technology
Ferroelectric Capacitors
Memory Cells
Field Effect Transistors
Voltage Reduction
Pattern Density Control
Gate Contact Structure
Resistance Drift Mitigation
Non-Volatile Memory
Decoupling Capacitors
Vertical Devices
66 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Cheng Chi in Semiconductor Technology

Introduction: Cheng Chi, located in Jersey City, NJ, has made significant strides in the field of semiconductor technology, holding an impressive total of 62 patents. His work reflects a deep understanding of memory devices and semiconductor structures, contributing to advancements in the electronics industry.

Latest Patents: Among Cheng Chi's latest innovations are two notable patents. The first, titled "Random weight initialization of non-volatile memory array," describes a memory device that incorporates a main feature situated beneath a surface of a photolithographic mask. This innovative design includes at least one Sub-Resolution Assistant Feature (SRAF) near the main feature, enhancing electrical conductivity through its area relationship with the SRAF.

The second patent, "Decoupling capacitor inside gate cut trench," presents a novel approach to forming a semiconductor device. In this patent, a first power rail is connected to a portion of a first decoupling capacitor through one or more vertically stacked contact vias. The integration of the decoupling capacitor within a semiconductor substrate's gate cut trench demonstrates a clever method for optimizing semiconductor designs.

Career Highlights: Cheng Chi has built a noteworthy career with leading companies in the technology sector. His tenure includes key positions at IBM and Globalfoundries Inc., where he played a vital role in advancing semiconductor technologies and memory devices. His expertise continues to influence the industry and inspire innovation.

Collaborations: Throughout his career, Cheng Chi has collaborated with distinguished colleagues, including Ruilong Xie and Chi-Chun Liu. These partnerships have fostered an environment of shared knowledge and innovation, leading to successful advancements in their respective fields.

Conclusion: With 62 patents to his name, Cheng Chi exemplifies the essence of innovation in semiconductor technology. His latest patents demonstrate a commitment to enhancing memory devices and semiconductor structures, solidifying his position as a significant contributor to the field. Through collaboration and a focus on groundbreaking designs, Cheng Chi continues to pave the way for future advancements in technology.

Profile summary based on public USPTO records.
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