The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Jun. 22, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Reinaldo Vega, Mahopac, NY (US);

Takashi Ando, Eastchester, NY (US);

Praneet Adusumilli, Somerset, NJ (US);

David Wolpert, Poughkeepsie, NY (US);

Cheng Chi, Jersey City, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); H01L 23/528 (2006.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); H01L 23/5286 (2013.01); H10D 1/68 (2025.01);
Abstract

An approach to forming a semiconductor device where the semiconductor device includes a first power rail that is connected to a decoupling capacitor by way of a first gate. The decoupling capacitor is also connected to a second gate. As such, the decoupling capacitor separates the first gate from the second gate. The decoupling capacitor may include a dielectric liner within a gate cut trench and a ferroelectric material over the dielectric liner. A second power rail may be connected to the decoupling capacitor by way of the second gate. The first gate and the second gate may be inline with respect thereto.


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