The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Dec. 03, 2020
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Reinaldo Vega, Mahopac, NY (US);
David Wolpert, Poughkeepsie, NY (US);
Takashi Ando, Eastchester, NY (US);
Praneet Adusumilli, Somerset, NJ (US);
Cheng Chi, Jersey City, NJ (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H01L 28/55 (2013.01); H01L 29/4236 (2013.01); H01L 29/66181 (2013.01); H01L 29/945 (2013.01);
Abstract
An approach to forming a semiconductor device where the semiconductor device includes a first power rail with one or more vertically stacked contact vias connecting to the first power rail to a portion of a first de-coupling capacitor. The semiconductor device includes the first de-coupling capacitor in a first portion of a semiconductor substrate in a first gate cut trench.