The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Jun. 08, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Takashi Ando, Eastchester, NY (US);

Reinaldo Vega, Mahopac, NY (US);

David Wolpert, Poughkeepsie, NY (US);

Cheng Chi, Jersey City, NJ (US);

Praneet Adusumilli, Somerset, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 29/516 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes: a first conductive electrode; a first dielectric stack structure provided on the first conductive electrode; a second conductive electrode provided on the first dielectric stack structure; a second dielectric stack structure provided on the second conductive electrode; and a third conductive electrode provided on the first dielectric stack structure, wherein each of the first dielectric stack structure and the second dielectric stack structure include a first dielectric layer comprising a first material; a second ferroelectric dielectric layer comprising a second material and provided on the first dielectric layer, and a third dielectric layer comprising a third material and provided on the second ferroelectric dielectric layer.


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