The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2023
Filed:
Aug. 29, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Ruilong Xie, Niskayuna, NY (US);
Hao Tang, Slingerlands, NY (US);
Cheng Chi, Jersey City, NJ (US);
Daniel Chanemougame, Troy, NY (US);
Lars W. Liebmann, Halfmoon, NY (US);
Mark V. Raymond, Latham, NY (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
One illustrative transistor device disclosed herein includes, among other things, a gate positioned above a semiconductor substrate, the gate comprising a gate structure, a conductive source/drain metallization structure positioned adjacent the gate, the conductive source/drain metallization structure having a front face, and an insulating spacer that is positioned on and in contact with at least a portion of the front face of the conductive source/drain metallization structure. In this example, the device also includes a gate contact opening that exposes at least a portion of the insulating spacer and a portion of an upper surface of the gate structure and a conductive gate contact structure positioned in the gate contact opening, wherein the conductive gate contact structure contacts at least a portion of the insulating spacer and wherein the conductive gate contact structure is conductively coupled to the gate structure.