The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Jul. 20, 2017
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries Inc., Grand Cayman, KY;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Su Chen Fan, Cohoes, NY (US);
Andrew M. Greene, Albany, NY (US);
Sean Lian, Slingerlands, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Mark V. Raymond, Schenectady, NY (US);
Ruilong Xie, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques for forming self-aligned contacts by forming gate sidewall spacers and gates before forming the contacts are provided. In one aspect, a method of forming self-aligned contacts includes the steps of: forming multiple gate sidewall spacers on a substrate; burying the gate sidewall spacers in a dielectric; forming gate trenches by selectively removing the dielectric from regions between the gate sidewall spacers in which gates will be formed; forming the gates in the gate trenches; forming contact trenches by selectively removing the dielectric from regions between the gate sidewall spacers in which the self-aligned contacts will be formed; and forming the self-aligned contacts in the contact trenches. A device structure having self-aligned contacts is also provided.