The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2021
Filed:
Jun. 28, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
George R. Mulfinger, Gansevoort, NY (US);
Judson R. Holt, Ballston Lake, NY (US);
Mark Raymond, Schenectady, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66507 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/0847 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to differential silicide structures and methods of manufacture. The structure includes: a substrate; a gate structure comprising a silicided gate region; and source and drain regions adjacent to the gate structure and comprising S/D silicided regions having a differential thickness compared to the silicided gate region.