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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10163633 B1

PDFFull Text
Date of Patent:
Dec. 25, 2018

Filed:

Mar. 13, 2017

Non-mandrel cut formation

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Shao Beng Law, Watervliet, NY (US);

Xunyuan Zhang, Albany, NY (US);

Errol Todd Ryan, Clifton Park, NY (US);

Nicholas LiCausi, Watervliet, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:

Thompson Hine LLP

Anthony Canale

Primary Examiner:

Stephanie P Duclair

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); H01L 23/528 (2006.01); H01L 21/3205 (2006.01); H01L 21/285 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/28556 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32051 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01);
Abstract

Methods of forming non-mandrel cuts. A dielectric layer is formed on a metal hardmask layer, and a patterned sacrificial layer is formed on the dielectric layer. The dielectric layer is etched to form a non-mandrel cut in the dielectric layer that is vertically aligned with the opening in the patterned sacrificial layer. A metal layer is formed on an area of the metal hardmask layer exposed by the non-mandrel cut in the dielectric layer. The metal hardmask layer is patterned with the metal layer masking the metal hardmask layer over the area.

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