The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
May. 31, 2017
Globalfoundries Inc., Grand Cayman, KY;
Xunyuan Zhang, Troy, NY (US);
Nicholas V. LiCausi, Watervliet, NY (US);
J. Jay McMahon, Clifton Park, NY (US);
Ryan S. Smith, Clifton Park, NY (US);
Errol Todd Ryan, Clifton Park, NY (US);
Shao Beng Law, Watervliet, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Structures for a skip via and methods of forming a skip via in an interconnect structure. A metallization level is formed that includes a dielectric layer with a top surface. An opening is formed that extends vertically from the top surface of the dielectric layer into the dielectric layer. A dielectric cap layer is deposited on a bottom surface of the opening. A fill layer is formed inside the opening and extends from the top surface of the dielectric layer to the dielectric cap layer on the bottom surface of the opening. A via opening is etched that extends vertically through the fill layer to the dielectric cap layer on the bottom surface of the opening.