The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Jul. 07, 2017
Globalfoundries Inc., Grand Cayman, KY;
Nicholas V. LiCausi, Watervliet, NY (US);
Errol Todd Ryan, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to fully aligned via structures having relaxed gapfills and methods of manufacture. The method includes: selectively depositing a capping material on a conductive material within a plurality of interconnect structures to form capped interconnect structures; depositing at least one insulator material over the capped interconnect structures; forming a fully aligned via structure through the at least one insulator material to expose the capping material; filling the fully aligned via structure with an alternative metal; and depositing a metal material on the alternative metal in the fully aligned via structure.