The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Jul. 19, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

James McMahon, Clifton Park, NY (US);

Ryan S. Smith, Clifton Park, NY (US);

Nicholas V. LiCausi, Watervliet, NY (US);

Errol Todd Ryan, Clifton Park, NY (US);

Xunyuan Zhang, Albany, NY (US);

Shao Beng Law, Watervliet, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76813 (2013.01); H01L 21/76814 (2013.01); H01L 23/5226 (2013.01);
Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to dielectric repair for via and skip via structures and methods of manufacture. The method includes: etching a via structure in a dielectric layer; repairing sidewalls of the via structure with a repair agent; and extending the via structure with an additional etching into a lower dielectric layer to form a skip via structure exposing a metallization layer.


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