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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10170330 B1

PDFFull Text
Date of Patent:
Jan. 01, 2019

Filed:

Jul. 29, 2015

Method for recessing a carbon-doped layer of a semiconductor structure

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventor:

Errol Todd Ryan, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:

Heslin Rothenberg Farley & Mesiti P.C.

Nathan B. Davis

Primary Examiner:

David Spalla

Int. Cl.
CPC ...
H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3105 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/76826 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

Semiconductor structure and methods of fabrication thereof are provided which includes, for instance, providing a carbon-doped material layer within a recess of a semiconductor structure; removing, in part, carbon from the carbon-doped material layer to obtain, at least in part, a carbon-depleted region thereof, the carbon-depleted region having a modified etch property with an increased etch rate compared to an etch rate of the carbon-doped material layer; and recessing the carbon-depleted region of the carbon-doped material layer by an etching process, with the carbon-depleted region being recessed based upon, in part, the modified etch property of the carbon-depleted region.

Find Patent Forward Citations

Ryan, Errol. (2019). Method for recessing a carbon-doped layer of a semiconductor structure (U.S. Patent No. 10170330). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10170330

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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