The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Jul. 12, 2017
Globalfoundries Inc., Grand Cayman, KY;
Errol Todd Ryan, Clifton Park, NY (US);
Sean Xuan Lin, Watervliet, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Devices and methods of fabricating devices are provided. One method includes: obtaining an intermediate semiconductor device having a dielectric layer, an insulating layer, and a plurality of metal lines, including a liner material and a first metal material; recessing the metal material of each metal line forming a set of cavities; filling the cavities with a protective cap; etching the protective cap and the liner material in the set of cavities; depositing a plurality of dielectric caps in the set of cavities; depositing an interlayer dielectric layer over the insulating layer and the plurality of dielectric caps; patterning a via in the interlayer dielectric layer; and depositing a lining and a second metal material in the interconnect area; wherein the second metal material is electrically insulated from the first metal in at least one of the plurality of metal lines.