The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Aug. 01, 2018
Globalfoundries Inc., Grand Cayman, KY;
Wei Hong, Clifton Park, NY (US);
Liu Jiang, Clifton Park, NY (US);
Yongjun Shi, Clifton Park, NY (US);
Yi Qi, Niskayuna, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Hui Zang, Guilderland, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A first dielectric layer is deposited over a first gate structure in a first device area and a second gate structure in a second device area, and then planarized. A second dielectric layer is deposited over the planarized first dielectric layer, and then removed from the first device area. After removing the second dielectric layer from the first device area, the first dielectric layer in the first device area is recessed to expose the first gate structure. A silicide is formed on the exposed first gate structure.