IDiyas

For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Yongjun Shi

USPTO Granted Patents = 10 

Average Co-Inventor Count = 6.7

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:

goldMedal9 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal1 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2018-2021

where 'Filed Patents' based on already Granted Patents

10 patents (USPTO):
1. 11171036 - Preventing dielectric void over trench isolation region (2021-11-09),
2. 10910276 - STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method (2021-02-02),
3. 10804199 - Self-aligned chamferless interconnect structures of semiconductor devices (2020-10-13),
4. 10636894 - Fin-type transistors with spacers on the gates (2020-04-28),
5. 10546775 - Field-effect transistors with improved dielectric gap fill (2020-01-28),
6. 10461155 - Epitaxial region for embedded source/drain region having uniform thickness (2019-10-29),
7. 10297675 - Dual-curvature cavity for epitaxial semiconductor growth (2019-05-21),
8. 10249538 - Method of forming vertical field effect transistors with different gate lengths and a resulting structure (2019-04-02),
9. 10164010 - Finfet diffusion break having protective liner in fin insulator (2018-12-25),
10. 10068902 - Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method (2018-09-04),

Title: Yongjun Shi: Innovator in Semiconductor Technology

Introduction

Yongjun Shi is a prominent inventor based in Clifton Park, NY (US), known for his significant contributions to semiconductor technology. With a total of 10 patents to his name, he has made remarkable advancements in the field, particularly in the area of dielectric materials and transistor structures.

Latest Patents

One of Yongjun Shi's latest patents focuses on preventing dielectric voids over trench isolation regions. This innovative method provides a void-free dielectric over trench isolation regions in an FDSOI substrate. The structure includes a first transistor with an active gate, a second transistor with a different active gate, and a trench isolation region that electrically isolates the two transistors. The dielectric material is designed to be void-free, ensuring optimal performance of the transistors.

Another notable patent involves an STI structure with a liner along the lower portion of the longitudinal sides of the active region. This structure includes an active region extending from a substrate, a gate over the active region, and a source/drain region. The STI structure features a liner and a fill layer that enhances the performance of the transistors by inducing tensile stress in specific regions.

Career Highlights

Yongjun Shi has worked with leading companies in the semiconductor industry, including GlobalFoundries Inc. and GlobalFoundries U.S. Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.

Collaborations

Throughout his career, Yongjun Shi has collaborated with talented professionals, including Yi Qi and Hsien-Ching Lo. These collaborations have fostered a creative environment that has led to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Yongjun Shi's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape the future of semiconductor innovations.

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