The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Oct. 01, 2019
Globalfoundries Inc., Grand Cayman, KY;
Yongjun Shi, Clifton Park, NY (US);
Xinyuan Dou, Clifton Park, NY (US);
Chun Yu Wong, Clifton Park, NY (US);
Hongliang Shen, Ballston Lake, NY (US);
Baofu Zhu, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A structure, an STI structure and a related method are disclosed. The structure may include an active region extending from a substrate; a gate extending over the active region; and a source/drain region in the active region, and an STI structure. The STI structure includes a liner and a fill layer on the liner along the opposed longitudinal sides of a lower portion of the active region, and the fill layer along the opposed ends of the active region. The liner may include a tensile stress-inducing liner that imparts a transverse-to-length tensile stress in at least a lower portion of the active region but not lengthwise. The liner can be applied in an n-FET region and/or a p-FET region to improve performance.