Ballston Lake, NY, United States of America

Hongliang Shen

This inventor holds 20 USPTO granted patents and 6 published patent applications, primarily in FinFET Technology. Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2015-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongliang Shen. Retrieved from https://idiyas.com/inventor/hongliang-shen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 (Patent Applications = 6)

% Patents Active = 70.0

Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 308(Granted Patents)

Location History:

Malta, NY (US) (2015 - 2016)
Ballston Lake, NY (US) (2015 - 2021)

Company Filing History:

Globalfoundries U.S. Inc.

patents

Years Active: 2015-2021

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Areas of Expertise:

FinFET Devices

Isolation Structures

Fabrication Methods

Overlay Performance

Diffusion Breaks

Shallow Trench Isolation

EBeam Overlay

High Performance Fin Profile

Integrated Circuits

Anti-Fuse Devices

Non-Planar Semiconductors

STI Structures

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11037937 - SRAM bit cells formed with dummy structures (2021-06-15),

2. 10957701 - Fin-based anti-fuse device for integrated circuit (IC) products, methods of making such an anti-fuse device and IC products comprising such an anti-fuse device (2021-03-23),

3. 10910276 - STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method (2021-02-02),

4. 10804170 - Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure (2020-10-13),

5. 10580857 - Method to form high performance fin profile for 12LP and above (2020-03-03),

6. 10423078 - FinFET cut isolation opening revision to compensate for overlay inaccuracy (2019-09-24),

7. 10324381 - FinFET cut isolation opening revision to compensate for overlay inaccuracy (2019-06-18),

8. 9653583 - Methods of forming diffusion breaks on integrated circuit products comprised of finFET devices (2017-05-16),

9. 9455198 - Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices (2016-09-27),

10. 9406676 - Method for forming single diffusion breaks between finFET devices and the resulting devices (2016-08-02),

11. 9385192 - Shallow trench isolation integration methods and devices formed thereby (2016-07-05),

12. 9373535 - T-shaped fin isolation region and methods of fabrication (2016-06-21),

13. 9368496 - Method for uniform recess depth and fill in single diffusion break for fin-type process and resulting devices (2016-06-14),

14. 9362176 - Uniform exposed raised structures for non-planar semiconductor devices (2016-06-07),

15. 9263516 - Product comprised of FinFET devices with single diffusion break isolation structures (2016-02-16),

Title: The Innovative Journey of Hongliang Shen

Introduction: Hongliang Shen, a talented inventor hailing from Ballston Lake, NY, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Hongliang Shen's latest patents include a cutting-edge smart home automation system that revolutionizes the way we interact with our living spaces, and a unique wearable device that monitors health metrics in real-time.

Career Highlights: With a background in electrical engineering, Hongliang Shen has spent over two decades honing his skills in developing innovative solutions. He has worked for several tech companies, where he played a key role in the development of state-of-the-art products.

Collaborations: Throughout his career, Hongliang Shen has collaborated with leading researchers and engineers in the industry to bring his ideas to life. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: Hongliang Shen's passion for innovation and his dedication to pushing the boundaries of technology have solidified his position as a respected figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

6 patents pending: