The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Jun. 30, 2014
Globalfoundries Inc., Grand Cayman, KY;
Hong Yu, Rexford, NY (US);
HongLiang Shen, Ballston Lake, NY (US);
Zhao Lun, Ballston Lake, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
Richard J. Carter, Saratoga Springs, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
The use of two different materials for shallow trench isolation and deep structural trenches with a dielectric material therein (e.g., flowable oxide and a HARP oxide, respectively) causes non-uniform heights of exposed portions of raised semiconductor structures for non-planar semiconductor devices, due to the different etch rates of the materials. Non-uniform openings adjacent the exposed portions of the raised structures from recessing the isolation and dielectric materials are filled with additional dielectric material to create a uniform top layer of one material (the dielectric material), which can then be uniformly recessed to expose uniform portions of the raised structures.