Zhao Lun

USPTO Granted Patents = 21 (Patent Applications = 1)

Average Co-Inventor Count = 6.1

ph-index = 4

Forward Citations = 78(Granted Patents)

Location History:

Beacon, NY (US) (2009)
Singapore, SG (2005 - 2014)
Ballston Lake, NY (US) (2015 - 2016)

Company Filing History:

7 out of 962

Chartered Semiconductor Manufacturing Ltd (corporation)

patents

7 out of 1,016

Globalfoundries Singapore Pte. Ltd.

International Business Machines Corporation

patents

5. 1 out of 131,214

Samsung Electronics Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2005-2016

where 'Filed Patents' based on already Granted Patents

21 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9431528 - Lithographic stack excluding SiARC and method of using same (2016-08-30),

2. 9419101 - Multi-layer spacer used in finFET (2016-08-16),

3. 9362176 - Uniform exposed raised structures for non-planar semiconductor devices (2016-06-07),

4. 9337306 - Multi-phase source/drain/gate spacer-epi formation (2016-05-10),

5. 9059218 - Reducing gate expansion after source and drain implant in gate last process (2015-06-16),

6. 8987083 - Uniform gate height for semiconductor structure with N and P type fins (2015-03-24),

7. 8716081 - Capacitor top plate over source/drain to form a 1T memory device (2014-05-06),

8. 8274115 - Hybrid orientation substrate with stress layer (2012-09-25),

9. 8178417 - Method of forming shallow trench isolation structures for integrated circuits (2012-05-15),

10. 8143651 - Nested and isolated transistors with reduced impedance difference (2012-03-27),

11. 8053327 - Method of manufacture of an integrated circuit system with self-aligned isolation structures (2011-11-08),

12. 7999300 - Memory cell structure and method for fabrication thereof (2011-08-16),

13. 7932178 - Integrated circuit having a plurality of MOSFET devices (2011-04-26),

14. 7838390 - Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein (2010-11-23),

15. 7795680 - Integrated circuit system employing selective epitaxial growth technology (2010-09-14),

Title: Inventor Zhao Lun: Revolutionizing Technology in Singapore

Introduction: Zhao Lun is a visionary inventor based in Singapore, SG, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Zhao Lun's most recent patents focus on advancements in artificial intelligence, renewable energy solutions, and sustainable urban development.

Career Highlights: With over two decades of experience in the tech industry, Zhao Lun has led numerous successful projects that have significantly impacted various sectors, including healthcare, transportation, and telecommunications.

Collaborations: Zhao Lun has collaborated with leading research institutions, universities, and tech companies worldwide to further his research and bring his innovative ideas to life.

Conclusion: Zhao Lun's dedication to pushing the boundaries of technology and creating a more sustainable future solidifies his position as a prominent figure in the world of innovation.

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1 patent pending:

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