The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Mar. 10, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Zhenyu Hu, Clifton Park, NY (US);
Zhao Lun, Ballston Lake, NY (US);
Xing Zhang, Ballston Lake, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/308 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 29/785 (2013.01); H01L 21/308 (2013.01); H01L 29/0657 (2013.01);
Abstract
In a non-planar based semiconductor process where the structure includes both N and P type raised structures (e.g., fins), and where a different type of epitaxy is to be grown on each of the N and P type raised structures, prior to the growing, a lithographic blocking material over one of the N and P type raised structure portions is selectively etched to expose and planarize a gate cap. After the first type of epitaxy is grown, the process is repeated for the other of the N and P type epitaxy.