The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Jan. 28, 2009
Zhao Lun, Singapore, SG;
James Yong Meng Lee, Singapore, SG;
Lee Wee Teo, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Chung Woh Lai, Singapore, SG;
Johnny Widodo, Singapore, SG;
Shailendra Mishra, Singapore, SG;
Jeffrey Chee, Singapore, SG;
Zhao Lun, Singapore, SG;
James Yong Meng Lee, Singapore, SG;
Lee Wee Teo, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Chung Woh Lai, Singapore, SG;
Johnny Widodo, Singapore, SG;
Shailendra Mishra, Singapore, SG;
Jeffrey Chee, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A memory cell includes a substrate, an access transistor and a storage capacitor. The access transistor comprising a gate stack disposed on the substrate, and a first and second diffusion region located on a first and second opposing sides of the gate stack. The storage capacitor comprises a first capacitor plate comprising a portion embedded within the substrate below the first diffusion region, a second capacitor plate and a capacitor dielectric sandwiched between the embedded portion of the first capacitor plate. At least a portion of the first diffusion region forms the second capacitor plate.