IDiyas

For the Inventor, By the Inventor

Singapore, Singapore

Johnny Widodo

USPTO Granted Patents = 21 

Average Co-Inventor Count = 6.0

ph-index = 4

Forward Citations = 67(Granted Patents)


Location History:

  • Beacon, NY (US) (2008 - 2009)
  • Singapore, SG (2009 - 2014)

Company Filing History:

goldMedal12 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
silverMedal8 out of 1,016 
 
Globalfoundries Singapore Pte. Ltd.
 patents
bronzeMedal7 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
4. 6 out of 164,108 
 
International Business Machines Corporation
 patents
5. 3 out of 14,705 
 
Infineon Technologies Ag
 patents
where one patent can have more than one assignee

Years Active: 2008-2014

where 'Filed Patents' based on already Granted Patents

21 patents (USPTO):
1. 8716081 - Capacitor top plate over source/drain to form a 1T memory device (2014-05-06),
2. 8274115 - Hybrid orientation substrate with stress layer (2012-09-25),
3. 8178417 - Method of forming shallow trench isolation structures for integrated circuits (2012-05-15),
4. 8143651 - Nested and isolated transistors with reduced impedance difference (2012-03-27),
5. 8053327 - Method of manufacture of an integrated circuit system with self-aligned isolation structures (2011-11-08),
6. 7999300 - Memory cell structure and method for fabrication thereof (2011-08-16),
7. 7932178 - Integrated circuit having a plurality of MOSFET devices (2011-04-26),
8. 7923365 - Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon (2011-04-12),
9. 7906426 - Method of controlled low-k via etch for Cu interconnections (2011-03-15),
10. 7847402 - BEOL interconnect structures with improved resistance to stress (2010-12-07),
11. 7838390 - Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein (2010-11-23),
12. 7829422 - Integrated circuit having ultralow-K dielectric layer (2010-11-09),
13. 7795680 - Integrated circuit system employing selective epitaxial growth technology (2010-09-14),
14. 7767577 - Nested and isolated transistors with reduced impedance difference (2010-08-03),
15. 7737029 - Methods of forming metal interconnect structures on semiconductor substrates using oxygen-removing plasmas and interconnect structures formed thereby (2010-06-15),

Title: Innovations and Contributions of Johnny Widodo in Memory Device Technology

Introduction: Johnny Widodo is a prominent inventor based in Singapore, recognized for his significant contributions to memory device technology. With an impressive portfolio of 21 patents, Widodo has made strides in developing innovative solutions that enhance memory performance and efficiency.

Latest Patents: Among his latest patents, Widodo has developed a "Capacitor Top Plate Over Source/Drain to Form a 1T Memory Device." This invention describes a method and structure for a memory device, such as a 1T-SRAM, which features a capacitor top plate situated directly over a doped bottom plate region. The device is characterized by an isolation film surrounding the active area on a substrate, complemented by a gate dielectric and gate electrode situated over a portion of the active area. Accompanying elements include a source and drain situated adjacent to the gate electrode, further optimized for performance.

Another notable patent is the "Hybrid Orientation Substrate with Stress Layer," which involves a hybrid orientation substrate incorporating a base substrate with a first orientation. This innovative substrate is enhanced with a first surface layer, also with a specific orientation, and a second surface layer that introduces additional mechanical properties through stress layers, ultimately contributing to improved device performance.

Career Highlights: Johnny Widodo has built his career at reputable organizations, including Chartered Semiconductor Manufacturing Ltd and Globalfoundries Singapore Pte. Ltd. His roles at these esteemed companies have allowed him to pursue groundbreaking research and development in memory device technologies, marking him as a key figure in the semiconductor industry.

Collaborations: Throughout his career, Widodo has collaborated with talented professionals, including Zhao Lun and Chung Woh Lai. These collaborations have not only enriched his work but also fostered innovation through shared expertise and interdisciplinary approaches.

Conclusion: As an inventor, Johnny Widodo continues to pave the way in the field of memory devices. His latest patents demonstrate a commitment to advancing technology and addressing the industry's evolving needs. With a robust career and valuable contributions, Widodo remains a pivotal figure in innovation within the semiconductor landscape.

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