1. Chartered Semiconductor Manufacturing Ltd (corporation) (12 from 962 patents)

2. Globalfoundries Singapore Pte. Ltd. (8 from 1,016 patents)

3. Samsung Electronics Co., Ltd. (7 from 131,214 patents)

4. International Business Machines Corporation (6 from 164,108 patents)

5. Infineon Technologies Ag (3 from 14,705 patents)

1. 8716081 - Capacitor top plate over source/drain to form a 1T memory device

2. 8274115 - Hybrid orientation substrate with stress layer

3. 8178417 - Method of forming shallow trench isolation structures for integrated circuits

4. 8143651 - Nested and isolated transistors with reduced impedance difference

5. 8053327 - Method of manufacture of an integrated circuit system with self-aligned isolation structures

6. 7999300 - Memory cell structure and method for fabrication thereof

7. 7932178 - Integrated circuit having a plurality of MOSFET devices

8. 7923365 - Methods of forming field effect transistors having stress-inducing sidewall insulating spacers thereon

9. 7906426 - Method of controlled low-k via etch for Cu interconnections

10. 7847402 - BEOL interconnect structures with improved resistance to stress

11. 7838390 - Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein

12. 7829422 - Integrated circuit having ultralow-K dielectric layer

13. 7795680 - Integrated circuit system employing selective epitaxial growth technology

14. 7767577 - Nested and isolated transistors with reduced impedance difference

15. 7737029 - Methods of forming metal interconnect structures on semiconductor substrates using oxygen-removing plasmas and interconnect structures formed thereby