The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2011
Filed:
Dec. 28, 2006
Lee Wee Teo, Singapore, SG;
Yong Meng Lee, Singapore, SG;
Jeffrey Chee, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Chung Woh Lai, Singapore, SG;
Johnny Widodo, Singapore, SG;
Zhao Lun, Singapore, SG;
Shailendra Mishra, Beacon, NY (US);
Lee Wee Teo, Singapore, SG;
Yong Meng Lee, Singapore, SG;
Jeffrey Chee, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Chung Woh Lai, Singapore, SG;
Johnny Widodo, Singapore, SG;
Zhao Lun, Singapore, SG;
Shailendra Mishra, Beacon, NY (US);
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A method is provided for manufacturing an integrated circuit having a plurality of MOSFET devices, comprising the steps of: providing a plurality of MOSFET devices each having a first and a second structural parameter associated therewith, wherein a value of one of the first and a second structural parameter of each device is selected to provide a value of a performance parameter of the device substantially equal to a predetermined reference value, the predetermined reference value being the same for each device.