IDiyas

For the Inventor, By the Inventor

Singapore, Singapore

Yong Meng Lee

USPTO Granted Patents = 35 

Average Co-Inventor Count = 3.9

ph-index = 8

Forward Citations = 211(Granted Patents)


Location History:

  • Beacon, NY (US) (2011)
  • Woodlands, SG (2012)
  • Singapore, SG (2000 - 2014)
  • Mechanicville, NY (US) (2015 - 2017)

Company Filing History:

goldMedal20 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
silverMedal8 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal7 out of 164,108 
 
International Business Machines Corporation
 patents
4. 6 out of 1,016 
 
Globalfoundries Singapore Pte. Ltd.
 patents
5. 2 out of 14,705 
 
Infineon Technologies Ag
 patents
6. 2 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
7. 2 out of 244 
 
Infineon Technologies North America Corp.
 patents
8. 1 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
where one patent can have more than one assignee

Years Active: 2000-2017

where 'Filed Patents' based on already Granted Patents

35 patents (USPTO):
1. 9607989 - Forming self-aligned NiSi placement with improved performance and yield (2017-03-28),
2. 9524911 - Method for creating self-aligned SDB for minimum gate-junction pitch and epitaxy formation in a fin-type IC device (2016-12-20),
3. 9385030 - Spacer to prevent source-drain contact encroachment (2016-07-05),
4. 9209258 - Depositing an etch stop layer before a dummy cap layer to improve gate performance (2015-12-08),
5. 9202697 - Forming a gate by depositing a thin barrier layer on a titanium nitride cap (2015-12-01),
6. 9147572 - Using sacrificial oxide layer for gate length tuning and resulting device (2015-09-29),
7. 9123783 - Integrated circuits and methods of forming integrated circuits with interlayer dielectric protection (2015-09-01),
8. 8859388 - Sealed shallow trench isolation region (2014-10-14),
9. 8716081 - Capacitor top plate over source/drain to form a 1T memory device (2014-05-06),
10. 8624329 - Spacer-less low-K dielectric processes (2014-01-07),
11. 8274115 - Hybrid orientation substrate with stress layer (2012-09-25),
12. 8106462 - Balancing NFET and PFET performance using straining layers (2012-01-31),
13. 8053327 - Method of manufacture of an integrated circuit system with self-aligned isolation structures (2011-11-08),
14. 7999325 - Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS (2011-08-16),
15. 7977185 - Method and apparatus for post silicide spacer removal (2011-07-12),

Title: Innovations by Yong Meng Lee: A Pioneering Inventor in Semiconductor Technology

Introduction: Yong Meng Lee is a renowned inventor based in Singapore, SG, who has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 35 patents, Lee has established himself as a leading figure in the development of advanced manufacturing processes for integrated circuits.

Latest Patents: Among his latest innovations are two notable patents. The first patent, titled "Forming self-aligned NiSi placement with improved performance and yield," focuses on the methods for creating trench silicide that does not compromise the silicon source/drain regions. This innovative technique involves multiple steps, including the formation of dummy gates and the creation of raised source/drain regions, culminating in the application of silicide for enhanced performance.

The second patent, "Method for creating self-aligned SDB for minimum gate-junction pitch and epitaxy formation in a fin-type IC device," details a process for creating self-aligned FINFET structures. This method incorporates forming concave-shaped cavities in silicon fins, constructing trenches, and applying oxide to yield a refined structure that improves device performance.

Career Highlights: Yong Meng Lee has held key positions at several leading technology firms, notably at Chartered Semiconductor Manufacturing Ltd and Globalfoundries Inc. His work at these companies has been pivotal in pushing the boundaries of semiconductor manufacturing technology.

Collaborations: Throughout his career, Lee has collaborated with other distinguished professionals in the field, including Chung Woh Lai and Young Way Teh. These collaborations have fostered innovation and led to advancements in semiconductor processes.

Conclusion: Yong Meng Lee's extensive body of work and his continued innovations exemplify the spirit of progress in semiconductor technology. With his numerous patents and impactful collaborations, Lee continues to inspire and influence the industry, marking him as a significant inventor of our time.

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