1. Chartered Semiconductor Manufacturing Ltd (corporation) (20 from 962 patents)

2. Globalfoundries Inc. (8 from 5,671 patents)

3. International Business Machines Corporation (7 from 164,108 patents)

4. Globalfoundries Singapore Pte. Ltd. (6 from 1,016 patents)

5. Samsung Electronics Co., Ltd. (2 from 131,214 patents)

6. Infineon Technologies Ag (2 from 14,705 patents)

7. Infineon Technologies North America Corp. (2 from 244 patents)

8. Freescale Semiconductor,inc. (1 from 5,491 patents)

1. 9607989 - Forming self-aligned NiSi placement with improved performance and yield

2. 9524911 - Method for creating self-aligned SDB for minimum gate-junction pitch and epitaxy formation in a fin-type IC device

3. 9385030 - Spacer to prevent source-drain contact encroachment

4. 9209258 - Depositing an etch stop layer before a dummy cap layer to improve gate performance

5. 9202697 - Forming a gate by depositing a thin barrier layer on a titanium nitride cap

6. 9147572 - Using sacrificial oxide layer for gate length tuning and resulting device

7. 9123783 - Integrated circuits and methods of forming integrated circuits with interlayer dielectric protection

8. 8859388 - Sealed shallow trench isolation region

9. 8716081 - Capacitor top plate over source/drain to form a 1T memory device

10. 8624329 - Spacer-less low-K dielectric processes

11. 8274115 - Hybrid orientation substrate with stress layer

12. 8106462 - Balancing NFET and PFET performance using straining layers

13. 8053327 - Method of manufacture of an integrated circuit system with self-aligned isolation structures

14. 7999325 - Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS

15. 7977185 - Method and apparatus for post silicide spacer removal