The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Jul. 19, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Tien-Ying Luo, Clifton Park, NY (US);
Feng Zhou, Beacon, NY (US);
Yan Ping Shen, Saratoga Springs, NY (US);
Haiting Wang, Clifton Park, NY (US);
Haoran Shi, Malta, NY (US);
Wei Hua Tong, Mechanicville, NY (US);
Seung Kim, Andover, MA (US);
Yong Meng Lee, Mechanicville, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/28176 (2013.01); H01L 29/6659 (2013.01);
Abstract
A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.